The device is designed for express non-destructive contactless local measurement of non-equilibrium charge carrier effective lifetime in silicon
substrates, epi-wafers and solar cells at different stages of manufacturing cycle. It can be used for incoming and outcoming inspection of
silicon ingots and wafers, tuning and periodic inspection of semiconductor and solar cell technology quality. Lifetime determination is based on
measuring photoconductivity decay after pulselight photo-exciting with usage of reflected microwave as a probe.
* Application : Silicon Ingots
[Specification ]
Parameter
Nominal
Accuracy
Laser Light Diode Radiation
Wave Length
980nm
¡¾30
Power in measurement area adjustment range
50~500mW
Pulse width adjustment range
0.5~60 ¥ìs
Microwave Generator Operation Frequency
10GHz
¡¾0.5
Microwave power at the measurement unit
0.01W
¡¾ 10%
Measurable Wafer Resistivity Range, Ohm.cm
for p-type specification
0.8 ~100Ohm.§¯
for n-type specification
0.8 ~100Ohm.§¯
Dimensions
measurement head
290x200x65mm
electronic unit
210x220x60mm
Power
AC 220V,
50 Hz, 30W
This is for contactless lifetime measuring and mapping device for non equilibrium carrier lifetime inspection at silicon mono and multi crystalline ingots.
Lifetime determination is based on measuring photoconductivity decay after pulse light photo-exciting with usage of reflected microwave as probe. It enables repetition and contactless of measurement and does not require special surface treatment before measurement or wafer cutting. * Application : Silicon mono & Multi crystalline Ingots
